features m e c h an i c al d at a maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified b 2 4 0a b 2 5 0a b 2 6 0a b 2 a b 4 a b 5 a b 6 a m a x i m um r e c u r r ent peak r e v e r s e v o l tage v rrm 40 50 60 v ma x imu m rms v o lt ag e v r w s 28 35 42 v maximum dc blocking voltage v dc 40 50 60 v maximum average forw ord rectified current at c t l (see fig.1) i (av) a peak forw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i fsm a maximum instantaneous forw ard voltage at v 2 . 0 a ( n o t e . 1 ) v f v ma x imu m dc r ev e r s e c u r r e nt ( note1 ) @t a =25 o c at rated dc blockjing voltage @t a =100 o c operating junction and storage temperature range t stg o c storage temperature range t j o c note: 1.pulse test:300 s pulse width,1%duty cy cle terminals:solder plated, solderable per mil-std-750, 1111 method 2026 high current capability,low forward voltage drop 0 . 5 i r t y p i c al j u n c t i on c a p a c i t an c e ( n o t e 2) o c / w b 2 3 0a high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals b220 a --- b260 a 2. p . c . b . m o un t ed w i t h 0 . 2 " x 0 . 2 " ( 5 . 0 x 5 . 0 m m 2 ) c o pp e r pad a r e a s reverse voltage: 20 --- 60 v current: 2.0 a built-in strain relief c a s e : j e d e c d o - 214 a c , m o l ded pla s t i c o v er 1111 passivated chip device marking code low power loss,high effciency plastic package has underwriters laboratory 111 flammability classification 94v-0 ma units 20 50.0 2.0 do - 2 14 a c ( s m a ) low profile package for surface mounted applications 30 14 21 20 b 3 a 30 metal silicon junction, majority carrier conduction high surge capability for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications guardring for overvoltage protection b 2 2 0a polarity: color band denotes cathode end w eigh t : 0 . 00 2 oun c e s , 0 . 0 64 g r am - 65 -- - + 150 -65--- +150 -65--- +150 0 . 5 0 . 7 20 .0 inch(mm) barrier rectifier surface mount schottky r jl 15.0 www.shunyegroup.com.cn
0.5 0 50 resistive or inductive load p.c.b.mounted on 0.2 x0.2 (5.0x5.0mm) copperpad areas 1.0 60 70 80 90 100 110 120 130 140 150 160 b220a - b24 0a b250a - b260a 1.5 2 . 0 at rated t l 8.3ms single half sine-wave (jedec method) 1 10 100 50 10 20 40 30 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 50 1 0.1 0.01 b220a - b240a b250a - b260a puise width=300 s 1%duty cycle t j =25 c t j =150 c t j =150 c o o o 100 0.1 10 1 0 . 0 0 1 0.01 20 0 406080100 b 22 0a - b 24 0a b 25 0a - b 26 0a t j =75 c t j =125 c t j =75 c 0 0 0 10 1 10 1 0 0 4 0 0 1 0 0 0 . 1 b220 a - b240 a b 2 5 0 a - b 2 6 0 a o t j =25 c f=1.0mhz vsig=50mvp-p average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes fi g. 5-typical junction capaci tance fi g. 2-- peak forward surge current number of cycles at 60hz instantaneous forward voltage,volts percent of rated peak reverse voltage, reverse voltage,volts lead temperature junction capacitance, pf r a t i ngs a n d c h a r a c ter i st i c c u r v es b220a --- b260a fi g. 3 -- typi cal forward characteri sti cs fi g. 4 -- typi cal reverse characteri stics fi g.1 -- forward derating curve www.shunyegroup.com.cn
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